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lifetime buy last order 3 oct 08 last ship 14 may 09 MRF9060LSR1 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies up to 1000 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. ? typical two - tone performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 17 db efficiency ? 40% imd ? - 31 dbc ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power features ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? low gold plating thickness on leads. l suffix indicates 40 ? nominal. ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, + 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 219 1.25 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case r jc 0.8 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. document number: mrf9060 - 1 rev. 10, 9/2008 freescale semiconductor technical data MRF9060LSR1 945 mhz, 60 w, 26 v lateral n - channel broadband rf power mosfet case 360c - 05, style 1 ni - 360s ? freescale semiconductor, inc., 2008. all rights reserved.
lifetime buy last order 3 oct 08 last ship 14 may 09 2 rf device data freescale semiconductor MRF9060LSR1 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) ? 3.7 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.17 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 98 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 50 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf (continued)
lifetime buy last order 3 oct 08 last ship 14 may 09 MRF9060LSR1 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 16 17 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 36 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? -31 -28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? -16 -9 db two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 17 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 39 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? -31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? -16 ? db power output, 1 db compression point (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) p 1db ? 70 ? w common- source amplifier power gain (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) g ps ? 17 ? db drain efficiency (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) ? 51 ? %
lifetime buy last order 3 oct 08 last ship 14 may 09 4 rf device data freescale semiconductor MRF9060LSR1 rf input figure 1. 945 mhz broadband test circuit schematic rf output c6 c1 z15 v dd z17 z10 0.360 x 0.270 microstrip z11 0.060 x 0.270 microstrip z12 0.110 x 0.060 microstrip z13 0.330 x 0.060 microstrip z14 0.230 x 0.060 microstrip z15 0.740 x 0.060 microstrip z16 0.130 x 0.060 microstrip z17 0.340 x 0.060 microstrip pcb taconic rf - 35 - 0300, 30 mil, r = 3.55 z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.180 x 0.270 microstrip z5 0.350 x 0.270 microstrip z6 0.270 x 0.520 x 0.140 taper z7 0.170 x 0.520 microstrip z8 0.410 x 0.520 microstrip z9 0.060 x 0.520 microstrip + v gg z1 z3 z5 z14 z16 c14 b2 b1 c17 + z4 z2 c7 c2 l1 c13 c16 + c15 + z13 z12 z10 c10 c11 c12 l2 c3 c9 c4 c5 c8 z7 z8 dut z6 z9 z11 table 5. 945 mhz broadband test circuit component designations and values part description part number manufacturer b1 short ferrite bead 2743019447 fair- rite b2 long ferrite bead 2743029446 fair- rite c1, c7, c13, c14 47 pf chip capacitors atc100b470jt500xt atc c2, c3, c11 0.8- 8.0 gigatrim variable capacitors 27291sl johanson c4, c5, c8, c9 10 pf chip capacitors atc100b100jt500xt atc c6, c15, c16 10 f, 35 v tantalum chip capacitor t491d106k035at kemet c10 3.0 pf chip capacitor atc100b3r0jt500xt atc c12 0.5 pf chip capacitor (mrf9060) 0.7 pf chip capacitor (mrf9060s) atc100b0r5bt500xt atc100b0r7bt500xt atc atc c17 220 f electrolytic chip capacitor mcax63v227m13x22 multicomp l1, l2 12.5 nh inductors a04t- 5 coilcraft
lifetime buy last order 3 oct 08 last ship 14 may 09 MRF9060LSR1 5 rf device data freescale semiconductor figure 2. 930 - 960 mhz broadband test circuit component layout cut out area wb1 c1 c2 c3 c4 c6 c7 c9 c8 c10 c5 c11 c12 c14 c13 c15 c16 c17 l1 l2 b1 b2 rev?02 900 mhz v dd v gg mrf9060 wb2 input output freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
lifetime buy last order 3 oct 08 last ship 14 may 09 6 rf device data freescale semiconductor MRF9060LSR1 typical characteristics 100 ?70 0 0.1 intermodulation distortion (dbc) imd, 10 1 ?10 ?20 ?30 ?40 ?50 ?60 10 100 8 10 12 14 16 18 20 0 10 20 30 40 50 60 p out , output power (watts) pep f, frequency (mhz) g ps , power gain (db) 930 18 figure 3. class ab broadband circuit performance 14 11 10 p out , output power (watts) pep figure 4. power gain versus output power figure 5. intermodulation distortion versus output power 15 13 12 17 16 935 940 945 950 955 960 p out , output power (watts) avg. p out , output power (watts) pep figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power g ps , power gain (db) imd, intermodulation distortion (dbc) , drain efficiency (%) ?38 ?36 ?34 ?32 ?30 35 40 45 50 ?10 ?18 ?14 , drain efficiency (%) imd, intermodulation distortion (dbc) irl, input return loss (db) g ps imd irl g ps v dd = 26 vdc i dq = 450 ma f = 945 mhz g ps , power gain (db) v dd = 26 vdc p out = 60 w (pep) i dq = 450 ma 1 10 100 500 ma i dq = 650 ma v dd = 26 vdc f1 = 945 mhz f2 = 945.1 mhz 450 ma 275 ma v dd = 26 vdc f1 = 945 mhz f2 = 945.1 mhz i dq = 275 ma ?12 ?16 18 17.5 17 16.5 16 15.5 15 1 10 100 ?20 ?25 ?30 ?40 ?45 ?50 ?60 450 ma 500 ma 650 ma 3rd order 5th order 7th order ?35 ?55 two?tone measurement, 100 khz tone spacing v dd = 26 vdc i dq = 450 ma f1 = 945 mhz f2 = 945.1 mhz
lifetime buy last order 3 oct 08 last ship 14 may 09 MRF9060LSR1 7 rf device data freescale semiconductor typical characteristics 10 100 6 8 10 12 14 16 18 ?60 ?40 ?20 0 20 40 60 p out , output power (watts) pep figure 8. power gain, efficiency, and imd versus output power , drain efficiency (%) g ps v dd = 26 vdc i dq = 450 ma f1 = 945 mhz f2 = 945.1 mhz g ps , power gain (db) imd 1 imd, intermodulation distortion (dbc)
lifetime buy last order 3 oct 08 last ship 14 may 09 8 rf device data freescale semiconductor MRF9060LSR1 figure 9. series equivalent source and load impedance f mhz z source z load 930 945 960 0.80 - j0.10 0.81 - j0.10 0.80 - j0.05 2.08 - j0.65 2.07 - j0.38 2.04 - j0.37 v dd = 26 v, i dq = 450 ma, p out = 60 w pep f = 960 mhz z o = 5 f = 930 mhz f = 930 mhz f = 960 mhz z load z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
MRF9060LSR1 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor MRF9060LSR1
MRF9060LSR1 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 10 sept. 2008 ? data sheet revised to reflect part status change, p. 1, including use of applicable overlay. ? updated part numbers in table 5, component designations and values, to rohs compliant part numbers, p. 4 ? replaced case outline 360c - 05, issue e with issue f, p. 9 - 10. ? added product documentation and revision history, p. 11
12 rf device data freescale semiconductor MRF9060LSR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf9060 - 1 rev. 10, 9/2008

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